high temperature annealing中文是什么意思

• 高温退火

• "high"中文翻译    adj. 1.高的〔指物，形容人的身高用 tall〕；高 ...
• "temperature"中文翻译    n. 1.温度，气温。 2.体温。 3.〔口语〕发烧，高 ...
• "anneal"中文翻译    vt. 1.【冶金】使韧化，使退火，使焖火。 2.〔比喻 ...
• "annealing temperature" 中文翻译 :    退火温度
• "annealing temperature range" 中文翻译 :    退火温度范围
• "annealing temperature-hardness plot" 中文翻译 :    退火温度与硬度关系曲线图
• "annealing-point temperature" 中文翻译 :    韧化点温度
• "low temperature annealing" 中文翻译 :    低温退火; 液体喷砂法
• "low temperature annealing hardening" 中文翻译 :    低温退火硬化
• "low temperature annealing treatment" 中文翻译 :    低温退火处理
• "low-temperature annealing" 中文翻译 :    低温退火
• "stress relieving annealing temperature" 中文翻译 :    应力退火温度
• "upper annealing temperature" 中文翻译 :    退火温度上限
• "high temperature" 中文翻译 :    高热; 高温度的
• "high-temperature" 中文翻译 :    高温度的
• "high-temperature high-pressure" 中文翻译 :    高温高压实验
• "high temperature high velocity drying" 中文翻译 :    高温高速干燥
• "high-temperature high-pressure apparatus" 中文翻译 :    高温高压设备
• "abnormal high temperature" 中文翻译 :    异常高温
• "adaptation to high temperature" 中文翻译 :    高温适应
• "air outlet high temperature" 中文翻译 :    空气出口高温
• "anomalous high temperature" 中文翻译 :    反常高温
• "areas of high temperature and rainfall" 中文翻译 :    高温多雨地区
• "bimetal for high temperature" 中文翻译 :    高温用双金属
• "boiler high temperature corrosion" 中文翻译 :    锅炉高温腐蚀

• 5 . after high temperature annealing the hardness of the composites did not reduced obviously until 973k , this temperature greatly exceeds that of pure copper ( after cold machining , the temperature is 423k )
  本文制备的材料经高温退火后的硬度明显降低温度点为973k ，大大超过了纯铜（冷加工态）的423k ，而且热稳定性能较好。
• S . the composite prepared has excellent heat stability and high - temperature property . during the course of high temperature annealing , the hardness of the composite does not reduce obviously until 973k , while the temperature of pure copper ( after cold machining ) is 423k in the same conditions
  制备的cr _ 2o _ 3 cu复合材料具有良好的热稳定性及高温性能，在高温退火处理过程中，硬度显著降低点的温度为973k ，大大高于纯铜的硬度降低点。
• Sige simox : oxygen ions with high dose were implanted into sige grown directly on silicon substrate for the first time , and sige - oi novel structure was formed successfully with additional high temperature annealing ; it has been confirmed that oxygen implantation with 45kev , 3 1017cm - 2 and annealing at 12500c in ar + 5 % o2 for 5 hours , are fit for the formation of sige - oi structure ; ge loss during the high temperature annealing has been observed , which is originated from ge volatility and ge diffusion ; it has been proposed to use nanoporous layer induced by h + / he + implantation to surppress ge diffusion and to use surface oxidation to overcome the upper limit of sige simox . sige smart - cut : hydrogen ions were implanted into sige material and followed by high temperature process ( 4000c to 7000c ) ; blistering study was done and suggested the possibility of sige layer transfer by smart - cut technology ; it is concluded that the bubble formation is easier in sige than in si , and the strain in sige / si and the difference of binding energy in sige and in si could possibly contribute to this effect . behavior of sige / si implanted with hydrogen : gave a detailed study on sige implanted by beamline or phi hydrogen implantation ; it has been found that great strain is introduced into sige by hydrogen implantation and this strain could be alleviated by high temperature annealing ; both for conditional beamline implantation and piii hydrogen implantation , 600 is appropriate for the post - implantation treatment
  Sige - simox工艺方面：首次采用硅( 100 )衬底上直接外延的100nm厚sige的样品中注入高剂量的o离子，通过退火处理成功制备了sige - oi新结构，即sige - simox工艺，证实了以45kev注入3 10 ~ ( 17 ) 7cm ~ ( - 2 )剂量的氧离子，随后在氧化层的保护下经1250 ， ar + 5 o _ 2气氛的高温退火( 5小时)过程，可以制备出sige - oi新型材料；实验中观察到退火过程中的ge损失现象，分析了其原因是ge挥发( ge通过表面氧化层以geo挥发性物质的形式进入退火气氛)和ge扩散( ge穿过离子注入形成的氧化埋层而进入si衬底中) ，其中ge扩散是主要原因；根据实验结果及实验中出现的问题，对下一步工作提出两个改进的方案：一是通过在si衬底中注入适量h ~ + / he ~ +形成纳米孔层来阻断ge扩散通路，二是可以通过控制表面氧化来调节安止额士淤丈捞要表面sige层中的ge组分，从而部分解决sige
• An ion implanter without ion mass analyzer was applied to simulate the phi procedure to fabricate soi materials by implantation of water plasma ions . thin soi structure was successfully fabricated by the implanter using 50 ~ 90kev water plasma ion implantation with the dose ranging from 2 - 6 . 5 + 017cm - 2 and , subsequently , the high temperature annealing
  我们使用无质量分析器的离子注入机，模拟等离子体离子注入过程，成功地在该注入机上用水等离子体离子注入制备出了界面陡峭、平整，表层硅单晶质量好，埋层厚度均匀的薄型soi材料。